职称：校聘副教授
最终学历：博士
个人经历：西安电子科技大学和中科院微电子所联合培养博士
研究方向：器件模拟仿真、器件工艺研发、等效模型建立、毫米波集成电路设计、毫米波器件辐照效应研究
代表性成果：
1. 主持国家自然科学基金青年基金项目一项，项目名称：InP基HEMT辐照效应研究，起止时间：2015年1月-2017年12月；
2. 河南省博士后科研二等资助；
3. 发表文章：
[1] Zhong Yinghui, Yang Jie, Li Xinjian, et al. Impact of the Silicon-nitride Passivation Film Thickness on the Characteristics of InAlAs/InGaAs InP-based HEMTs. Journal of the Korean Physical Society, 66(6), pp: 1020-1024, 2015.
[2] Zhong Yinghui, Zheng Guoheng, Li Xinjian, et al. A W-band high-gain and low-noise amplifier MMIC using InP-based HEMTs. Journal of Infrared and Millimeter Waves, 2015.
[3] Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. High performance InP-based In0.52Al0.48As /In0.53Ga0.47As HEMTs with extrinsic transconductance of 1052 mS/mm, Journal of Infrared and Millimeter Waves, 32(3), pp:193-197, 2013.
[4] Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. 0.15 μm T-gate In0.52Al0.48As /In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz, Chinese Physics B, 22(12), pp:128503-5, 2013.
[5] Zhong Yinghui, Su Yongbo, Jin Zhi, et al. An InGaAs/InP W-band dynamic frequency divider, Journal of Infrared and Millimeter Waves, 31(5), pp:393-398, 2012.
[6] Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. A W-band two-stage cascode amplifier with gain of 25.7 dB, Journal of Semiconductors, 34(12), pp: 125003-5, 2013.
[7] Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. An 88 nm gate-length In0.53Ga0.47As/ In0.52Al0.48As InP-based HEMT with fmax of 201 GHz, Journal of Semiconductors, 33(7), pp: 39-42, 2012.
[8] Zhong Yinghui, Wang Xiantai, Su Yongbo, et al. Impact of the lateral width of the gate recess on the DC and RF characteristics of InAlAs/InGaAs HEMTs, Journal of Semiconductors, 33(5), pp: 61-65, 2012.
[9] Zhong Yinghui, Zhang Yuming, Zhang Yimen, et al. A W-band two-stage cascode amplifier with small-signal gain of 25.7 dB, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, 3-5 June 2013, Hong Kong, China, 2013.
[10] Zhong Yinghui, Wang Xiantai, Su Yongbo, Cao Yuxiong, et al. Sub 100 nm In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT with fT=204 GHz, fmax=352 GHz, and gm,max=918 mS/mm. 2011 International Symposium on Radio-Frequency Integration Technology (RFIT), Nov. 30 2011-Dec. 2 2011, pp: 213-216, Beijing, China, 2011.
[11] 钟英辉，张玉明，张义门等. W波段InP HEMT低噪声放大器, 第十七届全国化合物半导体材料微波器件和光电器件学术会议, 2012.11.07-10, pp: 326-329, 开封, 2012.
[12] 王显泰，钟英辉，金智，汪宁. 一种采用单次电子束曝光制备T型栅的方法, 2014.1, 中国, 201110441236.5
